Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3.3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.25 GBW (typ) (MHz) 5500 BW at Acl (MHz) 1200 Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 2000 Vn at flatband (typ) (nV√Hz) 2.5 Vn at 1 kHz (typ) (nV√Hz) 25 Iq per channel (typ) (mA) 20.5 Vos (offset voltage at 25°C) (max) (mV) 2.5 Rail-to-rail No Features Decompensated, Shutdown Rating Catalog Operating temperature range (°C) -40 to 125 CMRR (typ) (dB) 80 Input bias current (max) (pA) 5 Offset drift (typ) (µV/°C) 1.5 Iout (typ) (mA) 80 2nd harmonic (dBc) 80 3rd harmonic (dBc) 86 Frequency of harmonic distortion measurement (MHz) 10
Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3.3 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.25 GBW (typ) (MHz) 5500 BW at Acl (MHz) 1200 Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 2000 Vn at flatband (typ) (nV√Hz) 2.5 Vn at 1 kHz (typ) (nV√Hz) 25 Iq per channel (typ) (mA) 20.5 Vos (offset voltage at 25°C) (max) (mV) 2.5 Rail-to-rail No Features Decompensated, Shutdown Rating Catalog Operating temperature range (°C) -40 to 125 CMRR (typ) (dB) 80 Input bias current (max) (pA) 5 Offset drift (typ) (µV/°C) 1.5 Iout (typ) (mA) 80 2nd harmonic (dBc) 80 3rd harmonic (dBc) 86 Frequency of harmonic distortion measurement (MHz) 10