产品详情

Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 13 GBW (typ) (MHz) 350 BW at Acl (MHz) 650 Acl, min spec gain (V/V) 2 Slew rate (typ) (V/µs) 2550 Vn at flatband (typ) (nV√Hz) 8.9 Vn at 1 kHz (typ) (nV√Hz) 8.9 Iq per channel (typ) (mA) 30.5 Vos (offset voltage at 25°C) (max) (mV) 5 Rail-to-rail No Rating Catalog Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 70 Input bias current (max) (pA) 50 Offset drift (typ) (µV/°C) 10 Iout (typ) (mA) 70 2nd harmonic (dBc) 79 3rd harmonic (dBc) 100 Frequency of harmonic distortion measurement (MHz) 10
Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 13 GBW (typ) (MHz) 350 BW at Acl (MHz) 650 Acl, min spec gain (V/V) 2 Slew rate (typ) (V/µs) 2550 Vn at flatband (typ) (nV√Hz) 8.9 Vn at 1 kHz (typ) (nV√Hz) 8.9 Iq per channel (typ) (mA) 30.5 Vos (offset voltage at 25°C) (max) (mV) 5 Rail-to-rail No Rating Catalog Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 70 Input bias current (max) (pA) 50 Offset drift (typ) (µV/°C) 10 Iout (typ) (mA) 70 2nd harmonic (dBc) 79 3rd harmonic (dBc) 100 Frequency of harmonic distortion measurement (MHz) 10
SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8 VSON (DRB) 8 9 mm² 3 x 3
  • High Bandwidth: 650 MHz (G = 1 V/V)
  • High Slew Rate: 2550 V/µs (4-V Step)
  • Excellent THD: –78 dBc at 10 MHz
  • Low Input Voltage Noise: 8.9 nV/√Hz
  • Fast Overdrive Recovery: 8 ns
  • Fast Settling time (1% 4-V Step): 8 ns
  • Low Input Offset Voltage: ±1 mV
  • Low Input Bias Current: ±10 pA
  • High Output Current: 70 mA
  • High Bandwidth: 650 MHz (G = 1 V/V)
  • High Slew Rate: 2550 V/µs (4-V Step)
  • Excellent THD: –78 dBc at 10 MHz
  • Low Input Voltage Noise: 8.9 nV/√Hz
  • Fast Overdrive Recovery: 8 ns
  • Fast Settling time (1% 4-V Step): 8 ns
  • Low Input Offset Voltage: ±1 mV
  • Low Input Bias Current: ±10 pA
  • High Output Current: 70 mA

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.

The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.

The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.

Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.

Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.

The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew rate.

The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.

Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.

Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.

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类型 标题 下载最新的英语版本 日期
* 数据表 OPA659 Wideband, Unity-Gain Stable, JFET-Input Operational Amplifier 数据表 (Rev. C) PDF | HTML 2015年 11月 23日

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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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