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SM72482

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双通道 5A 复合栅极驱动器

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SM72482

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产品详情

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features PFET Drive Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features PFET Drive Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Renewable Energy Grade
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A Sink, 3A Source Current Capability
  • Two Channels Can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
  • Available in Dual Noninverting, Dual Inverting, and Combination Configurations
  • Supply Rail Under-Voltage Lockout Protection (UVLO)
  • SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Packages
    • SOIC
    • Thermally Enhanced VSSOP

All trademarks are the property of their respective owners.

  • Renewable Energy Grade
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A Sink, 3A Source Current Capability
  • Two Channels Can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
  • Available in Dual Noninverting, Dual Inverting, and Combination Configurations
  • Supply Rail Under-Voltage Lockout Protection (UVLO)
  • SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Packages
    • SOIC
    • Thermally Enhanced VSSOP

All trademarks are the property of their respective owners.

The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.

The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
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类型 标题 下载最新的英语版本 日期
* 数据表 SM72482 Dual 5A Compound Gate Driver 数据表 (Rev. C) 2013年 4月 1日
应用简报 How to overcome negative voltage transients on low-side gate drivers' inputs 2019年 1月 18日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日

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参考设计

PMP9461 — 适用于光伏微型逆变器直流/直流和直流/交流块的栅极驱动和辅助电源解决方案参考设计

PMP9461 参考设计完全满足光伏并网微型逆变器的功率和栅极驱动要求，其主要目标是在栅极驱动以及微型逆变器的辅助电源段实现显著集成和性能增强。此解决方案具有 SM72295（带集成电流检测功能的全桥栅极驱动器）、SM74101（7A 灌电流/3A 拉电流单通道驱动器）、SM72482（5A 双通道低侧驱动器）、LM5017（提供初级和次级辅助电源）以及用于为逆变器的直流/交流部分驱动器供电的 LM5017。所有辅助电源均使用具有成本效益的高效 Fly-BuckTM 拓扑生成。
测试报告: PDF
原理图: PDF
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SOIC (D) 8 Ultra Librarian
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  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
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