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TLE2161

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单通道、36V、6.5MHz 运算放大器

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OPA991 正在供货 单通道、40V、4.5MHz、低功耗运算放大器 Rail-to-rail I/O, wider supply voltage (2.7 V to 40 V), faster slew rate (21 V/μs), lower offset voltage (0.75 mV), lower noise (10.8 nV/√Hz), higher output current (75 mA)
TLV9361 正在供货 单路、40V、10.6MHz 轨到轨输出运算放大器 Wider supply voltage (4.5 V to 40 V), higher GBW (10.6 MHz), faster slew rate (25 V/μs), lower offset voltage (1.7 mV), lower noise (8.5 nV/√Hz), higher output current (60 mA)

TLE2161

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产品详情

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 6.4 Slew rate (typ) (V/µs) 10 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog Operating temperature range (°C) to Offset drift (typ) (µV/°C) 6 Features Decompensated Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 0.3 Output swing headroom (to positive supply) (typ) (V) -0.3
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 6.4 Slew rate (typ) (V/µs) 10 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog Operating temperature range (°C) to Offset drift (typ) (µV/°C) 6 Features Decompensated Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 0.3 Output swing headroom (to positive supply) (typ) (V) -0.3
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996
  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

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类型 标题 下载最新的英语版本 日期
* 数据表 Excalibur JFET-Input High-Output-Drive Micro Power Operational Amplifiers 数据表 (Rev. D) 1996年 5月 1日

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包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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